Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers

被引：0
|
作者：
Ha, S. [1 ]
Mieszkowski, P. [1 ]
Rowland, L.B. [2 ,3 ]
Skowronski, M. [1 ]
机构：
[1] Carnegie Mellon University, Department of Materials Science and Engineering, 5000 Forbes Ave, Pittsburgh, PA 15213, United States
[2] Sterling Semiconductor, Inc., 22660 Executive Drive, Sterling, VA 20166, United States
[3] General Electric Corporate R and D, One Research Circle, Niskayuna, NY 12309, United States
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
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D O I：
10.4028/www.scientific.net/msf.389-393.231
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学科分类号：
摘要：
5
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页码：231 / 234
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