Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT

被引：0

作者：

Mohamad M. ^{[1
]}

Mustafa F. ^{[1
]}

Hashim A.M. ^{[1
]}

Abd Rahman S.F. ^{[1
]}

Aziz A.A. ^{[2
]}

Hashim M.R. ^{[2
]}

机构：

[1] Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor

[2] Nano-Optoelectronics Research Lab, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang

来源：

Journal of Applied Sciences | 2010年 / 10卷 / 19期

关键词：

AlGaN/GaN; Gas sensor; HEMT; Schottky diode; Wide bandgap;

D O I：

10.3923/jas.2010.2338.2342

中图分类号：

学科分类号：

摘要：

In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of fabricated Schottky diodes show low series resistance of 210 Ω and 330 Ω. The Schottky barrier height (SBH) in the range of 0.458-0.708 eV are experimentally obtained and the discrepancy with the calculated SBH is discussed. A measurement setup that has a capability to allow measurement at high temperature, high hydrogen gas density and low vacuum pressure is also presented. The fabricated device is expected to be suitable for gas sensing application. © 2010 Asian Network for Scientific Information.

引用

页码：2338 / 2342

页数：4

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