Gate-controlled proximity effect in superconductor/ferromagnet van der Waals heterostructures

被引:1
作者
Bobkov, G. A. [1 ]
Bokai, K. A. [1 ,2 ]
Otrokov, M. M. [3 ]
Bobkov, A. M. [1 ]
Bobkova, I., V [1 ,4 ]
机构
[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[2] St Petersburg State Univ, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia
[3] Univ Zaragoza, Inst Nanociencia & Mat Aragon INMA, CSIC, Zaragoza 50009, Spain
[4] Natl Res Univ Higher Sch Econ, Moscow 101000, Russia
基金
俄罗斯科学基金会;
关键词
EXCHANGE FIELD; SUPERCONDUCTIVITY;
D O I
10.1103/PhysRevMaterials.8.104801
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e., the nanoscale-penetration of electronic correlations from one material to another. In few-layer van der Waals (vdW) heterostructures the proximity regions occupy the entire system. Here, we demonstrate that the physics of magnetic and superconducting proximity effects in 2D superconductor/ferromagnet vdW heterostructures is determined by the effects of interface hybridization of the electronic spectra of both materials. The degree of hybridization can be adjusted by gating, which makes it possible to achieve a high degree of controllability of the proximity effect. In particular, we show that this allows for electrical switching of superconductivity in such structures on and off, as well as for control of the amplitude and sign of the Zeeman splitting of superconducting spectra, opening interesting opportunities for spintronics and spin caloritronics.
引用
收藏
页数:10
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