Optical properties of alloy states in GaNxAs1-x (x less than or equal 0.01)

被引:0
|
作者
Luo, Xiang-Dong
Sun, Bing-Hua
Xu, Zhong-Ying
机构
[1] Sch. of Science, Nantong Univ., Nantong 226007, China
[2] State Key Lab. of Superlattices and Microstructures, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, China
来源
Wuli Xuebao/Acta Physica Sinica | 2005年 / 54卷 / 05期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:2385 / 2388
相关论文
共 50 条
  • [21] Optical properties of AlxGa1 - XP (0 [less-than or equal to] x [less-than or equal to] 0.52) alloys
    Choi, S.G.
    Kim, Y.D.
    Yoo, S.D.
    Aspnes, D.E.
    Woo, D.H.
    Kim, S.H.
    Journal of Applied Physics, 2000, 87 (03) : 1287 - 1290
  • [22] Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs
    Fan, WJ
    Yoon, SF
    Cheah, WK
    Loke, WK
    Ng, TK
    Wang, SZ
    Liu, R
    Wee, A
    JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) : 470 - 474
  • [23] PREPARATION AND STRUCTURE OF THE SYSTEM LA1-XNAXCO1-XNBXO3 (0.01-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.99)
    PARKASH, OM
    KUMAR, R
    KUMAR, D
    BAHADUR, D
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (04) : 383 - 385
  • [24] Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy
    Hong, YG
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) : 29 - 34
  • [25] An empirical potential approach to structural stability of GaNxAs1-x
    Suda, T
    Kangawa, Y
    Nakamura, K
    Ito, T
    JOURNAL OF CRYSTAL GROWTH, 2003, 258 (3-4) : 277 - 282
  • [26] Mobility in gated GaNxAs1-x heterostructures as a probe of nitrogen-related electronic states
    Buckeridge, J.
    Fahy, S.
    PHYSICAL REVIEW B, 2011, 84 (14):
  • [27] Bismuth surfactant growth of the dilute nitride GaNxAs1-x
    Young, EC
    Tixier, S
    Tiedje, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 279 (3-4) : 316 - 320
  • [28] A MOSSBAUER-SPECTROSCOPY STUDY OF ELECTRODEPOSITED (COXNI1-X)(1-Y)FE-Y ALLOYS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1 AND Y-LESS-THAN-OR-EQUAL-TO-0.01
    JARTYCH, E
    OLCHOWIK, J
    ZURAWICZ, JK
    BUDZYNSKI, M
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (47) : 8921 - 8926
  • [29] Raman scattering characterization of annealed GaNxAs1-x layers
    Furuhata, T
    Kitano, T
    Magara, H
    Masuda, A
    Tanaka, S
    Moto, A
    Takahashi, M
    Tanabe, T
    Takagishi, S
    Yamamoto, A
    Hashimoto, A
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 673 - 676
  • [30] Steady state and transient electron transport properties of bulk dilute GaNxAs1-x
    Naylor, Daniel R.
    Dyson, Angela
    Ridley, Brian K.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (05)