Radiation-induced defects in p-type silicon carbide

被引：0
|
作者：
Kanazawa, S. [1 ]
Okada, M. [2 ]
Nozaki, T. [1 ]
Shin, K. [1 ]
Ishihara, S. [2 ]
Kimura, I. [1 ,3 ]
机构：
[1] Department of Nuclear Engineering, Kyoto University, Yoshida, Sakyo, Kyoto 606-8501, Japan
[2] Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-0494, Japan
[3] Institute of Nuclear Safety System, Inc., Sata, Mihama, Fukui 919-1205, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Carbon vacancy - Liquid nitrogen temperature - Room temperature - Thermal annealing;
D O I：
10.4028/www.scientific.net/msf.389-393.521
中图分类号：
学科分类号：
摘要：
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页码：521 / 524
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