MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl3:tBuNH2

被引：0

作者：

Joo, Oh-Shim ^{[2
]}

Jung, Kwang-Deog ^{[2
]}

Cho, Sung-Hoon ^{[2
]}

Kyoung, Je-Hong ^{[3
]}

Ahn, Chang-Kyu ^{[3
]}

Choi, Seong-Chul ^{[3
]}

Dong, Yongkwan ^{[4
]}

Yun, Hoseop ^{[4
]}

Han, Sung-Hwan ^{[1
]}

机构：

[1] Dept. of Chemistry, Hanyang University, Haengdang-dong 17, Sungdong-Ku, Seoul, 133-791, Korea, Republic of

[2] Eco-Nano Research Center, Korea Inst. of Sci. and Technol., Seoul, 133-791, Korea, Republic of

[3] Dept. of Mat. Eng., Ajou University, Suwon, 442-749, Korea, Republic of

[4] Dept. of Molecular Sci. and Technol., Ajou University, Suwon, 442-749, Korea, Republic of

来源：

Advanced Materials | 2002年 / 14卷 / 23期

关键词：

Aluminum nitride - Auger electron spectroscopy - Crystal structure - Film preparation - Nuclear magnetic resonance spectroscopy - Pressure effects - Rutherford backscattering spectroscopy - Scanning electron microscopy - Sublimation - Synthesis (chemical) - Thin films - X ray diffraction analysis;

D O I：

10.1002/1521-3862(20021203)8:63.0.CO;2-O

中图分类号：

学科分类号：

摘要：

A new type of precursor, AlCl3:tBuNH2 adduct, has been designed. The synthesis, preparation, and characterization of AlN thin films have been carried out. The AlCl3:tBuNH2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65°C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.

引用

页码：273 / 276