Diminished band discontinuity at the p/i interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer

被引：0
|
作者：
Pham, Duy Phong [1 ]
Kim, Sangho [2 ]
Tuan Le, Anh Huy [1 ]
Park, Jinjoo [1 ]
Yi, Junsin [1 ]
机构：
[1] College of Information and Communication Engineering, Sungkyunkwan University, Suwon,440-746, Korea, Republic of
[2] Department of Energy Science, Sungkyunkwan University, Suwon,440-746, Korea, Republic of
来源：
Journal of Alloys and Compounds | 2020年 / 762卷
关键词：
This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP); granted financial resource from the Ministry of Trade; Industry; Energy; Republic of Kore (No. 20163010012230 );
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摘要：
33
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页码：616 / 620
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