Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model

被引:27
|
作者
Bhardwaj S. [1 ]
Nahar N.K. [1 ]
Rajan S. [2 ]
Volakis J.L. [1 ,2 ]
机构
[1] Electroscience Laboratory, Ohio State University, Columbus, 43210, OH
[2] Electrical and Computer Engineering Department, Materials Science Engineering Department, Ohio State University, Columbus, 43210, OH
来源
| 1600年 / Institute of Electrical and Electronics Engineers Inc., United States卷 / 63期
关键词
2DEG layer; high-electron mobility transistor (HEMT); instability; plasma wave; tetrahertz emission; tetrahertz power;
D O I
10.1109/TED.2015.2512912
中图分类号
学科分类号
摘要
In this paper, we show how plasma-wave instability in an asymmetrically biased ungated InGaAs high-electron mobility transistor (HEMT) leads to terahertz emissions. Numerical calculations are provided using a new Maxwell-hydrodynamic solver. Using this solver, an accurate plasma-wave model is presented, accounting for nonuniform surroundings and finite dimensions of the 2D electron gas (2DEG) layer within the HEMT. We estimate that hundreds of nanowatts of power can be expected from such devices under ideal boundary conditions and sufficient channel mobility. Effects due to variations of carrier velocity, carrier concentration, and 2DEG confinement on the emitted power levels are also considered to provide design guidelines. © 2015 IEEE.
引用
收藏
页码:990 / 996
页数:6
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