Characteristics of boron in 4H-SiC layers produced by high-temperature techniques

被引：0

作者：

Kakanakova-Georgieva, A. ^{[1
]}

Yakimova, R. ^{[1
]}

Zhang, J. ^{[1
]}

Storasta, L. ^{[1
]}

Syväjärvi, M. ^{[1
]}

Janzén, E. ^{[1
]}

机构：

[1] Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden

来源：

Materials Science Forum | 2002年 / 389-393卷 / 01期

关键词：

Boron - Cathodoluminescence - Characterization - Chemical vapor deposition - Epitaxial growth - Growth rate - Silicon carbide - Sublimation;

D O I：

10.4028/www.scientific.net/msf.389-393.259

中图分类号：

学科分类号：

摘要：

Characteristics of boron in as-grown 4H-SiC layers produced by fast epitaxy, i.e. sublimation and vertical hot-wall CVD, were studied by electrical and optical measurements. The boron-related contribution to the net acceptor concentration in the layers (as determined by CV on p-type residual doped sublimation epitaxy layers), the presence of deep boron centers (as indicated by DLTS) and boron-related green emission at - 505 nm (as observed by CL) are detected for various growth temperatures and C/Si ratios. The results are discussed in relation with the C vacancies in the lattice that may be affected by growth rate and input C/Si ratio in the CVD process. © 2002 Trans Tech Publications.

引用

页码：259 / 262

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