Charge pumping technique for the evaluation of plasma induced edge damage in shallow S/D extension thin gate oxide NMOSFET's

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[1] Chung, Steve S.
[2] Chen, S.J.
[3] Kao, H.L.
[4] Luo, S.J.
[5] Lin, H.C.
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Chung, Steve S. | 2000年 / IEEE, Piscataway, NJ, United States卷
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