Effect of thickness of PZT thin films on the structural and dielectric properties of BMT/PZT multilayered thin films

被引：0

作者：

Lv, Chun ^{[1
]}

Wu, Zhi ^{[1
]}

Zhou, Jing ^{[1
]}

Shen, Jie ^{[1
]}

Chen, Wen ^{[1
]}

机构：

[1] Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan

来源：

Gongneng Cailiao/Journal of Functional Materials | 2014年 / 45卷 / 24期

关键词：

BMT/PZT multilayered thin films; Dielectric properties; The thickness of PZT thin films;

D O I：

10.3969/j.issn.1001-9731.2014.24.024

中图分类号：

学科分类号：

摘要：

Ba(Mg1/3Ta2/3)O3(BMT)/Pb(Zr0.52Ti0.48)O3(PZT) multilayered thin films have been prepared by liquid spin coating method and the effect of PZT thin films thickness on the BMT/PZT multilayered thin films have been investigated. With the thickness of the PZT thin films increasing, the dielectric constant of BMT/PZT multilayered thin films increases linearly. When the thickness of the PZT thin films is small, the dielectric loss of the BMT/PZT multilayered thin films increase significantly; while further increase the thickness of PZT thin films, the BMT/PZT multilayered thin films'dielectric loss declined until close to the value of the BMT thin films. This is due to the dielectric constant and loss of the PZT thin films are significantly higher than BMT thin films, and the existence of heterogeneous interface suppresses the domain wall'movement in PZT thin films, so the impact on the multilayered thin films dielectric loss weakened. The results show that the introduction of PZT thin films can enhance the dielectric constant of the BMT thin films while has little effect on the dielectric loss. ©, 2014, Journal of Functional Materials. All right reserved.

引用

页码：24115 / 24118

页数：3

共 17 条

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