Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3by plasma-assisted molecular beam epitaxy

被引:0
|
作者
20144100085898
机构
[1] Sobanska, Marta
[2] Klosek, Kamil
[3] Borysiuk, Jolanta
[4] Kret, Slawomir
[5] Tchutchulasvili, Giorgi
[6] Gieraltowska, Sylwia
[7] Zytkiewicz, Zbigniew R.
来源
Sobanska, Marta | 1600年 / American Institute of Physics Inc.卷 / 115期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
    Calabrese, G.
    Gao, G.
    van Treeck, D.
    Corfdir, P.
    Sinito, C.
    Auzelle, T.
    Trampert, A.
    Geelhaar, L.
    Brandt, O.
    Fernandez-Garrido, S.
    NANOTECHNOLOGY, 2019, 30 (11)
  • [42] Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy
    Shim, KH
    Hong, SE
    Kim, KH
    Paek, MC
    Cho, KI
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 383 - 388
  • [43] Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
    S. N. Timoshnev
    A. M. Mizerov
    M. S. Sobolev
    E. V. Nikitina
    Semiconductors, 2018, 52 : 660 - 663
  • [44] Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy
    Corrion, A
    Wu, F
    Mates, T
    Gallinat, CS
    Poblenz, C
    Speck, JS
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 587 - 595
  • [45] Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity
    Sagar, A
    Lee, CD
    Feenstra, RM
    Inoki, CK
    Kuan, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1812 - 1817
  • [46] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernández-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sánchez-García, M.A.
    López-Romero, D.
    Journal of Applied Physics, 2009, 106 (12):
  • [47] Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
    Schenk, HPD
    Kipshidze, GD
    Lebedev, VB
    Shokhovets, S
    Goldhahn, R
    Kräusslich, J
    Fissel, A
    Richter, W
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 359 - 364
  • [48] Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
    Mizerov, A. M.
    Jmerik, V. N.
    Kaibyshev, V. K.
    Komissarova, T. A.
    Masalov, S. A.
    Sitnikova, A. A.
    Ivanov, S. V.
    ACTA PHYSICA POLONICA A, 2008, 114 (05) : 1253 - 1258
  • [49] GaN Doped With Neodymium by Plasma-Assisted Molecular Beam Epitaxy for Potential Lasing Applications
    Readinger, Eric D.
    Metcalfe, Grace D.
    Shen, Paul Hongen
    Wraback, Michael
    Jha, Naveen
    Woodward, Nathaniel
    Capek, Pavel
    Dierolf, Volkmar
    RARE-EARTH DOPING OF ADVANCED MATERIALS FOR PHOTONIC APPLICATIONS, 2009, 1111 : 17 - +
  • [50] Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy
    Wong, Man Hoi
    Wu, Feng
    Mates, Thomas E.
    Speck, James S.
    Mishra, Umesh K.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)