High power high beam quality 1060-nm large optical cavity asymmetric waveguide semiconductor laser diode

被引：0

作者：

Tan, Shaoyang ^{[1
]}

Wang, Hao ^{[1
]}

Zhang, Ruikang ^{[1
]}

Lu, Dan ^{[1
]}

Wang, Wei ^{[1
]}

Ji, Chen ^{[1
]}

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing

来源：

Guangxue Xuebao/Acta Optica Sinica | 2015年 / 35卷

关键词：

High power; Lasers; Optical design; Waveguide;

D O I：

10.3788/AOS201535.s114006

中图分类号：

学科分类号：

摘要：

High power high beam quality 1060-nm InGaAs/GaAs quantum well (QW) semiconductor laser diode with an asymmetric large optical cavity (LOC) is designed and fabricated. The laser diode consists of compressively strained double InGaAs/GaAs quantum wells and a GaAs/AlGaAs separate confinement structure. To improve the high power performance, the transversal optical cavity is optimized to have low fast axis far-field divergence angle, large optical spot size and low facet optical density, low internal optical absorption loss and high internal quantum efficiency. By employing a weak optical confinement Al0.1Ga0.9As waveguide with thickness of 4 μm, a low transversal far-field divergence angle of 20° and large optical spot size near 1 μm are obtained. By detuning the QW position, the asymmetric waveguide with thinner p-side waveguide enables the laser diode high internal quantum efficiency even in high current injection level. Based on the optimization, 1.3 W continue wave optical power is achieved for broad area lasers with cavity length and strip width of 2 mm and 50 μm, respectively. For single spatial mode ridge waveguide laser diodes with same cavity length, 600 mW continue wave optical power is obtained at 10℃. ©, 2015, Chinese Optical Society. All right reserved.

引用

页数：5

共 9 条

[1] Achtenhagen M., Amarasinghe N.V., Jiang L.L., Et al., Spectral properties of high-power distributed Bragg reflector lasers, J Lightwave Technol, 27, 16, pp. 3433-3437, (2009)
[2] Gao W., Mastrovito A., Luo K., Et al., High-power 1060-nm InGaAs/GaAs single-mode laser diodes, 5711, pp. 58-65, (2005)
[3] Slipchenko S.O., Podoskin A.A., Vinokurov D.A., Et al., AlGaAs/GaAs diode lasers (1020~1100 nm) with an asymmetric broadened single transverse mode waveguide, Semiconductors, 47, 8, pp. 1079-1083, (2013)
[4] Wenzel H., Bugge F., Dallmer M., Et al., Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence, IEEE Photonics Technol Lett, 20, 3, pp. 214-216, (2008)
[5] Bugge F., Ressel P., Staske R., Et al., High-power high-efficiency 1150-nm quantum-well laser, IEEE J Sel Top Quantum Electron, 11, 5, pp. 1217-1222, (2005)
[6] Wenzel H., Crump P., Pietrzak A., Et al., Theoretical and experimental investigations of the limits to the maximum output power of laser diodes, New J Phys, 12, 8, (2010)
[7] Ryvkin B.S., Avrutin E.A., Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes, J Appl Phys, 97, 11, (2005)
[8] Tan S., Zhai T., Wang W., Et al., Design and fabrication of high power single mode double-trench ridge waveguide laser, (2014)
[9] Tan S., Zhai T., Wang W., Et al., High power 1060-nm super large vertical cavity semiconductor lasers, 9266, (2014)

← 1 →