Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication

被引：0

作者：

Wolffenbuttel, Reinoud F. ^{[1
]}

Winship, Declan ^{[2
]}

Qin, Yutao ^{[2
]}

Gianchandani, Yogesh ^{[2
]}

Bilby, David ^{[3
]}

Visser, Jaco H. ^{[3
]}

机构：

[1] Laboratory for Electronic Instrumentation, Department of Microelectronics, Delft University of Technology, Delft

[2] Center for Wireless Integrated MicroSensing and Systems (WIMS2) and the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, MI

[3] Research and Advanced Engineering, Ford Motor Company, Dearborn, 48121, MI

来源：

Optical Materials: X | 2024年 / 24卷

关键词：

CMOS compatibility; Integrated silicon optical microsystems; Near-UV optical filter; Optical MEMS technology; Silicon-nitride;

D O I：

10.1016/j.omx.2024.100348

中图分类号：

学科分类号：

摘要：

Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction (n> 2) and an acceptable optical loss (k<10−3) in nitride-rich SiNx of appropriate composition (x∼1.45). Bragg reflectors with a design wavelength at λo= 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiNx-based optical microsystems extends to wavelengths as low as 300 nm. © 2024

引用

共 45 条

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