Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

被引:0
作者
Yuksek, Ahmet Gurkan [1 ,2 ]
Horoz, Sabit [2 ,3 ]
Demir, Ilkay [2 ,4 ]
Altuntas, Ismail [2 ,4 ]
Tuzemen, Ebru Senadim [2 ,5 ]
机构
[1] Sivas Cumhuriyet Univ, Comp Engn Dept, TR-58140 Sivas, Turkiye
[2] Sivas Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, TR-58140 Sivas, Turkiye
[3] Sivas Univ Sci & Technol, Dept Fundamental Engn Sci, TR-58140 Sivas, Turkiye
[4] Sivas Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkiye
[5] Sivas Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkiye
关键词
SiN x film; RF magnetron sputtering; Refractive index; Energy band gap; Machine learning; OPTICAL-PROPERTIES; THIN-FILMS; TEMPERATURE;
D O I
10.1016/j.physb.2024.416581
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
SiNx films were grown on silicon substrates by Radio Frequency (RF) magnetron sputtering deposition. The effect of nitrogen flow on the structural and optical properties of the obtained films was investigated using X-ray diffraction, Scanning Electron Microscopy (SEM), UV-Vis-NIR spectrophotometer and spectroscopic ellipsometer, respectively. XRD spectra of the films showed that all films belong to amorphous structure. SEM photographs of SiNx films were analyzed. As a result of the analysis, it was observed that the surfaces of the films had a homogeneous and smooth structure as the nitrogen flow increased. The total and diffuse reflectance spectra of the films were measured and the energy band gaps of the films were determined using the Kubelka-Munk function by using the diffuse reflectance. It was observed that the energy band gap changed as the nitrogen percentage increased. The refractive index of all films was obtained as a function of temperature using a spectroscopic ellipsometer. In the second part of this study, we focused on predicting the temperature dependent refractive indices of the nitrogen flow-dependent films using Artificial Neural Networks (ANN). For the training of the ANN model, wavelength and temperature values from experimental data were used as input and refractive index as output parameters. The simulation and prediction results obtained from this model are compared with the experimental data and interpreted. It is concluded that the ANN approach is suitable for simulating and predicting the temperature dependent refractive index. The models successfully trained with ANN will be especially preferred for predicting the refractive indices of SiNx films, which cannot be measured experimentally, thus providing predictions in non-experimental ranges. In particular, the results obtained by focusing on the ability of the developed artificial neural network (ANN) models to predict the optical properties of SiNx films and their potential to provide information in non-experimental conditions, offer a new approach to quickly and effectively evaluate the optical properties of SiNx films. This approach reveals the importance of artificial intelligence-based methods in materials characterization studies.
引用
收藏
页数:10
相关论文
共 40 条
[21]   Effect of the post-heating temperatures on the microstructure, mechanical and electrical properties of silicon nitride thin films [J].
Huang, Lei ;
Ding, Zhiheng ;
Yuan, Juntang ;
Zhou, Di ;
Yin, Zengbin .
CERAMICS INTERNATIONAL, 2022, 48 (07) :9188-9196
[22]   Review-Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications [J].
Kaloyeros, Alain E. ;
Pan, Youlin ;
Goff, Jonathan ;
Arkles, Barry .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (06)
[23]   Low-temperature fabrication of silicon nitride thin films from a SiH4+N2 gas mixture by controlling SiNx nanoparticle growth in multi-hollow remote plasma chemical vapor deposition [J].
Kamataki, Kunihiro ;
Sasaki, Yusuke ;
Nagao, Iori ;
Yamashita, Daisuke ;
Okumura, Takamasa ;
Yamashita, Naoto ;
Itagaki, Naho ;
Koga, Kazunori ;
Shiratani, Masaharu .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 164
[24]  
Li K, 2022, RARE METAL MAT ENG, V51, P18
[25]   THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2) [J].
LOWE, AJ ;
POWELL, MJ ;
ELLIOTT, SR .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1251-1258
[26]   An artificial neural network chip based on two-dimensional semiconductor [J].
Ma, Shunli ;
Wu, Tianxiang ;
Chen, Xinyu ;
Wang, Yin ;
Tang, Hongwei ;
Yao, Yuting ;
Wang, Yan ;
Zhu, Ziyang ;
Deng, Jianan ;
Wan, Jing ;
Lu, Ye ;
Sun, Zhengzong ;
Xu, Zihan ;
Riaud, Antoine ;
Wu, Chenjian ;
Zhang, David Wei ;
Chai, Yang ;
Zhou, Peng ;
Ren, Junyan ;
Bao, Wenzhong .
SCIENCE BULLETIN, 2022, 67 (03) :270-277
[27]   Thermal conductivity modeling of nanofluids with ZnO particles by using approaches based on artificial neural network and MARS [J].
Maleki, Akbar ;
Elahi, Milad ;
Assad, Mamdouh El Haj ;
Nazari, Mohammad Alhuyi ;
Shadloo, Mostafa Safdari ;
Nabipour, Narjes .
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2021, 143 (06) :4261-4272
[28]  
Mehrotra K, 1997, ELEMENTS ARTIFICIAL
[29]   Classifying buildings according to seismic vulnerability using Cluster-ANN techniques: application to the city of Murcia, Spain [J].
Meyers-Angulo, J. Eduardo ;
Martinez-Cuevas, Sandra ;
Gaspar-Escribano, Jorge M. .
BULLETIN OF EARTHQUAKE ENGINEERING, 2023, 21 (07) :3581-3622
[30]   FTIR and spectroscopic ellipsometry investigations of the electron beam evaporated silicon oxynitride thin films [J].
Mohamed, S. H. .
PHYSICA B-CONDENSED MATTER, 2011, 406 (02) :211-215