Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

被引：13

作者：

Noda, T. ^{[1
]}

Mano, T. ^{[1
]}

Jo, M. ^{[1
]}

Kawazu, T. ^{[1
]}

Sakaki, H. ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 06期

关键词：

QUANTUM DOTS; GROWTH;

D O I：

10.1063/1.4752255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752255]

引用

页数：4