Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures

被引：0

作者：

Grad. Inst. of Opto-Electron. Tech., National Taipei Univ. of Technology, 1, Sec. 3, Chung Hsiao East Rd., Taipei, 10643, Taiwan ^{[1
]}

机构：

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 11期

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D O I：

10.1143/jjap.40.6239

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摘要：

Semiconducting gallium arsenide

引用

页码：6239 / 6242