Development of boron-lined ionization chamber used in n/γ mixed field

被引:0
作者
机构
[1] Nanjing University of Aeronautics and Astronautics
[2] Department of Physics, Nanchang University
来源
Wei, Z.-Y. (wzy_msc@nuaa.edu.cn) | 1624年 / Atomic Energy Press卷 / 47期
关键词
Boron-lined ionization chamber; I-V curve; Mixed field; Neutron sensitivity;
D O I
10.7538/yzk.2013.47.09.1624
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学科分类号
摘要
A boron-lined ionization chamber used in n/γ mixed field with better performance was developed. The boron-lined ionization chamber consists of two cavity rooms with the same size: One is for γ, the other is for both γ and neutron. The neutron sensitivity reaches a level of 9.2×10-16 A/(cm-2·s-1) with a calibrated Am-Be neutron source with neutron intensity estimated to be 2.7×107 s-1, and the γ sensitivity reaches a level of 7.36×10-16 A/(MeV·cm-2·s-1) with a calibrated 137Cs source with 5.24 μGy/h dose rate. The plateau length is 600 V and the slope is less than 4%/100 V. An average γ compensation coefficient is less than 5% at work voltage of-400 V, which can be used to monitor the n/γ mixed field around reactors.
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页码:1624 / 1628
页数:4
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