Structural, electrical and dielectric properties of DC reactive magnetron sputtered ZrO2 films for metal-oxide-semiconductor devices

被引：1
|
作者：
Kondaiah, P. [1 ]
Uthanna, S. [1 ]
机构：
[1] Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India
来源：
Materials Science Forum | 2014年 / 781卷
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D O I：
10.4028/www.scientific.net/MSF.781.155
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页码：155 / 165
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