Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process

被引：0

作者：

Gotoh, Yoshitaka ^{[1
]}

Matsumoto, Kazuhiko ^{[1
]}

Bubanja, Vladimir ^{[1
]}

Vazquez, Francisco ^{[1
]}

Maeda, Tatsuro ^{[1
]}

Harris, James S. ^{[2
]}

机构：

[1] Electrotechnical Laboratory MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

[2] Stanford University, Stanford, CA 94305, United States

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期

关键词：

Atomic force microscopy - Capacitance - Computer simulation - Mathematical models - Nanotechnology - Oxidation - Semiconductor device manufacture - Substrates - Temperature - Tunnel junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A planar-type single electron transistor (SET) was fabricated by the atomic force microscopy (AFM) nano-oxidation process. The fabricated SET showed the Coulomb oscillation characteristic with the period of about 2 V at room temperature. From the three-dimensional simulation, it is found out that the smaller the SET island size, the smaller the tunnel junction capacitance, and the tunnel junction capacitance shows a weak dependence on the tunnel junction width. Using the analytical model, the reason for this weak dependence was clarified.

引用

页码：2334 / 2337

共 49 条

[1] Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process
Gotoh, Y
Matsumoto, K
Bubanja, V
Vazquez, F
Maeda, T
Harris, JS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2334 - 2337
[2] Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process
Gotoh, Y
Matsumoto, K
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Quate, CF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1321 - 1325
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Matsumoto, K
INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (05) : 641 - 662
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Matsumoto, K
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Matsumoto, K
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Maeda, T
Harris, JS
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Matsumoto, K
PHYSICA B, 1996, 227 (1-4): : 92 - 94
[7] Room temperature operated single electron transistor by STM nano-oxidation process: Fabrication process and electrical properties
Matsumoto, K
IEICE TRANSACTIONS ON ELECTRONICS, 1996, E79C (11) : 1509 - 1514
[8] Room temperature Coulomb diamond characteristic of single electron transistor made by AFM nano-oxidation process
Gotoh, Y., 1600, Japan Society of Applied Physics (41):
[9] Room temperature Coulomb diamond characteristic of single electron transistor made by AFM nano-oxidation process
Gotoh, Y
Matsumoto, K
Maeda, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2578 - 2582
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Matsumoto, K
PROCEEDINGS OF THE IEEE, 1997, 85 (04) : 612 - 628

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