SiGe BiCMOS technology drives next-gen green, efficient analog ICs

被引：0

作者：

Nickolas, Christina

机构：

来源：

Electronic Products (Garden City, New York) | 2008年 / 50卷 / 08期

关键词：

Energy efficiency - Low power electronics - BiCMOS technology - Computer circuits - Timing circuits;

D O I：

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摘要：

Jazz Semiconductor (Newport Beach, CA) has announced a 0.18-μm SiGe BiCMOS platform (SBC18) that will enable customers to deliver green, energy-efficient analog ICs by offering power and efficiency savings over standard CMOS. The SBC18 will target low-power, integrated wireless, and networking products that require high-performance bipolar transistors with high-quality passives together with high-density logic. The modular SBC18 SiGe BiCMOS platform incorporates high-speed, standard, and high breakdown SiGe bipolar transistors, or SiGe NPNs, for low noise, high switching speeds, and better linearity. SiGe NPN provides up to 30% power savings over standard CMOS for high-speed precision analog circuits using current-mode logic (CML). SBC18 offers up to 200-GHz SiGe devices extending this power advantage to higher-frequency applications such as automotive radar.

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