First-principles study of the p-type doped InN

被引：0
|
作者：
Ding, Shao-Feng
Fan, Guang-Han
Li, Shu-Ti
Xiao, Bing
机构：
[1] Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
[2] School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2007年 / 56卷 / 07期
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页码：4062 / 4067
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