Photothermal deflection studies of GaAs epitaxial layers

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作者：
Department of Applied Physics, Thermal and Fluids Sciences Section, Delft University of Technology, Delft, Netherlands [1 ]
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来源：
Applied Optics | 2002年 / 41卷 / 24期
关键词：
Impurities - Light propagation - Light refraction - Substrates - Thermal diffusion;
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摘要：
Photothermal beam deflection studies were carried out with GaAs epitaxial layers grown on semi-insulating GaAs substrates. Thin films were grown by the molecular beam epitaxial method. Measurements were carried out by irradiation of the thin-film side as well as of the substrate side of the samples. The effective thermal diffusivity of the entire structure was influenced by the impurity density in thin epitaxial layers.
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页码：5179 / 5184
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