Photothermal deflection studies of GaAs epitaxial layers

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作者：

Department of Applied Physics, Thermal and Fluids Sciences Section, Delft University of Technology, Delft, Netherlands ^{[1
]}

机构：

来源：

Applied Optics | 2002年 / 41卷 / 24期

关键词：

Impurities - Light propagation - Light refraction - Substrates - Thermal diffusion;

D O I：

暂无

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学科分类号：

摘要：

Photothermal beam deflection studies were carried out with GaAs epitaxial layers grown on semi-insulating GaAs substrates. Thin films were grown by the molecular beam epitaxial method. Measurements were carried out by irradiation of the thin-film side as well as of the substrate side of the samples. The effective thermal diffusivity of the entire structure was influenced by the impurity density in thin epitaxial layers.

引用

页码：5179 / 5184