Characteristic of optical emission spectrum in electron-assisted chemical vapor deposition of diamond

被引：0

作者：

Wang, Zhi-Jun ^{[1
]}

Dong, Li-Fang ^{[1
]}

Li, Pan-Lai ^{[1
]}

Shang, Yong ^{[1
]}

机构：

[1] College of Physics Science and Technology, Hebei University, Baoding 071002, China

来源：

Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis | 2008年 / 28卷 / 04期

关键词：

Carbon - Chemical vapor deposition - Computer simulation - Diamonds - Film growth - Gas mixtures - Hydrogen - Methane - Monte Carlo methods - Optical emission spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The optical emission process of atomic hydrogen (Hα, Hβ, Hγ), atomic carbon C(2p3s2p2:λ = 165.7 nm) and radical CH(A2Δ&rarrX2∏:λ = 420-440 nm) in diamond film growth by electron-assisted chemical vapor deposition (EACVD) from a gas mixture of CH4 and H2 was studied by using Monte-Carlo simulation. The variation of the emission lines with gas pressure (0.1-12.5 kPa) of different substrate temperatures (573-1173 K) was investigated. And the results show that at different substrate temperatures the intensity of all the emission lines increase with increasing gas pressure at first, whereas decreased afterward. Furthermore, the emission lines intensity decreases with increasing substrate temperature at a relative low gas pressure, while increases with increasing substrate temperature at the higher gas pressure.

引用

页码：763 / 765