Flattening of surface by sputter-etching with low-energy ions

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机构：
[1] Matsutani, T.
[2] Iwamoto, K.
[3] Nagatomi, T.
[4] Kimura, Y.
[5] Takai, Y.
来源：
Matsutani, T. (takaomi@atom.ap.eng.osaka-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 40期
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Experimental; (EXP);
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摘要：
The thickness of the damaged layer on a GaAs surface induced by a focused 25 kV Ga+ ion beam (FIB) was reduced from ∼ 24 nm to ∼ 2.6 nm by finishing with low-energy Ar+ ions of 200 eV, which has been evaluated by cross-sectional observation under a transmission electron microscope (TEM). The finishing rendered the surface of the damaged layer significantly flatter. This flattening was found to be sensitive to the ion energy; a very smooth flat surface is obtained by sputter-etching with 200 eV Ar+ ions, whilst sputter-etching with 100 eV Ar+ ions causes GaAs particles to remain in the FIB-induced damage layer on the surface, and thus it is not flat.
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