Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electrical properties of PbZrO3 thin films prepared by sol-gel process

被引：24
作者：
Mensur Alkoy, Ebru [1 ,2 ]
Alkoy, Sedat [1 ,3 ]
Shiosaki, Tadashi [1 ]
机构：
[1] Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma
[2] Department of Physics, Kocaeli University, 41300 Izmit, Kocaeli
[3] Electronic Materials Laboratory, Department of Materials Science and Engineering, Cebze Institute of Technology, 41400 Gebze, Kocaeli
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 9 A期
关键词：
Antiferroelectrics; Doping; PbZrO[!sub]3[!/sub; Sol-gel; Thin films;
D O I：
10.1143/JJAP.44.6654
中图分类号：
学科分类号：
摘要：
Lead zirconate (PbZrO3) thin films doped with Ce, Cr and Er were grown on Pt(111)/Ti/SiO2/Si(100) substrates by sol-gel spin coating process. Polycrystalline films with a phase-pure perovskite structure and a random orientation were obtained regardless of doping materials. Microstructural examinations of the films revealed a two-phase microstructure consisting of large rosette-type perovskite regions with a nanocrystalline phase located in between. Perovskite rosettes were found to be of polycrystalline in nature with grain size ranging between 50-250 nm. Increasing number of annealing cycles and temperature were found to improve the microstructure, crystallinity and electrical properties. Doping elements were also found to increase electrical properties with a saturation polarization (Psat) reaching 65 × 10-6C/cm2 in Ce- and Cr-doped coatings compared to 39 × 10-6 C/cm2 for undoped PZ films. © 2005 The Japan Society of Applied Physics.
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页码：6654 / 6660
页数：6
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