Rapid Assessment Method of IGBT Junction Temperature in Inverter Under Sinusoidal Pulse Width Modulation

被引：0
|
作者：
Li Z. [1 ]
Li X. [1 ]
Zhang Q. [2 ]
Wang J. [1 ]
Wang L. [2 ]
机构：
[1] School of Electrical Engineering, Hebei University of Technology, Tianjin
[2] School of Control Science and Engineering, Hebei University of Technology, Tianjin
来源：
Li, Xiong (13512954779@163.com) | 1600年 / Science Press卷 / 43期
基金：
中国国家自然科学基金;
关键词：
Frequency period; Gauss Seudel; IGBT; Iterative calculation; Junction temperature; Switching period;
D O I：
10.13336/j.1003-6520.hve.20171031025
中图分类号：
学科分类号：
摘要：
In order to improve the simulation speed of insulated gate bipolar transistors (IGBT) junctions in sinusoidal pulse width modulation (SPWM), the Gauss Seidel iteration method was applied in the study of the IGBT junction temperature computation. The method of calculating the junction temperature of the switching period was analyzed, and then the iterative algorithm was used to calculate the junction temperature of power frequency cycle. Moreover, a comparison was conducted for the junction temperature obtained by this method, electro-thermal coupling model simulation, and optical fiber measurement experiment. The results show that, to obtain a 40 s junction temperature, it takes 15 min for the simulation method while the iterative calculation method only needs 20 s under the same accuracy, namely, the computation speed can increase by nearly 50 times. The increased computation speed by using iteration method can meet the requirements of long-term evaluation for junction temperature of IGBT module in inverter, which is significant for the life prediction of IGBT. © 2017, High Voltage Engineering Editorial Department of CEPRI. All right reserved.
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页码：3683 / 3689
页数：6
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