机构:
LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Jeon, Kye-Ik
[1
]
Lee, Jae-Hak
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Lee, Jae-Hak
[1
]
Paek, Seung-Won
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Paek, Seung-Won
[1
]
Kim, Dong-Wook
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Kim, Dong-Wook
[1
]
Lee, Won-Sang
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Lee, Won-Sang
[1
]
Lim, Chae-Rok
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Lim, Chae-Rok
[1
]
Cha, Ho-young
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Cha, Ho-young
[1
]
Choi, Hyung-kyu
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Choi, Hyung-kyu
[1
]
Chung, Ki-Woong
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LG Corp Inst of Technology, Seoul, Korea, Republic ofLG Corp Inst of Technology, Seoul, Korea, Republic of
Chung, Ki-Woong
[1
]
机构:
[1] LG Corp Inst of Technology, Seoul, Korea, Republic of
来源:
IEEE MTT-S International Microwave Symposium Digest
|
2000年
/
1卷
关键词:
Computer simulation - Current voltage characteristics - Electric impedance - High electron mobility transistors - Integrated circuit layout - Monolithic microwave integrated circuits;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
A record of wideband 5 to 27 GHz power amplifier is achieved with 20 dB gain and 21 dBm output power in two stage monolithic form based on LGCIT's 0.25 μm pHEMT. In design, we use lossy matching technique to obtain flat gain characteristic and use Cripps' matching technique to obtain flat output power characteristic. The chip size is compact 3.1 mm × 1.2 mm. We present how to realize wideband output, input and interstage matching network.