Study on laser damage of optical thin films on zinc-germanium diphosphide crystal induced by inclusion

被引:0
作者
Hao, Mingming [1 ]
Lu, Guoguang [1 ]
Wang, Lina [2 ]
Qin, Li [3 ]
Zhu, Hongbo [3 ]
Liu, Xia [1 ]
机构
[1] Key Laboratory on Reliability Physics and Application of Electronic Component, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, 510610, Guangdong
[2] Reliability Research and Analysis Center, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, 510610, Guangdong
[3] State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, Jilin
来源
Zhongguo Jiguang/Chinese Journal of Lasers | 2015年 / 42卷 / 06期
关键词
Finite element simulation; Inclusion induced; Laser damage; Thin films; Zinc-germanium diphosphide crystal;
D O I
10.3788/CJL201542.0607001
中图分类号
学科分类号
摘要
The laser damage mechanism for thin films on zinc-germanium diphosphide (ZGP) crystal is studied experimentally and theoretically to enhance the laser induced damage threshold (LIDT). ZGP which grows at one time is cut into 6 pieces, and is grinded and polished simultaneously. Four of the samples are coated with antireflection multi-layer optical thin film and are analyzed by scanning electron microscope (SEM), it is found that the thin film is rather smooth while some clusters still exist on some areas of the thin film. Secondary ion mass spectrometer (SIMS) is also used to ascertain that the clusters contain platinum. Laser whose wavelength is 2 mm and pulse width is 31 ns is used to test the thin film on ZGP according to the 1-on-1 method of ISO11254 standard to measure the LIDT of the thin film. The results show that the average LIDT of those coated samples is 0.68 J/cm2. The LIDT is also calculated by finite element method and the result is 3.2 J/cm2. The study shows that platinum impurity has significant impact on the LIDT of optical thin film on ZGP and therefore decreasing the impurity density will increase LIDT of the thin film. ©, 2015, Science Press. All right reserved.
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页数:8
相关论文
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