Evolution of crystal mosaicity during physical vapor transport growth of SiC

被引：0
|
作者：
Katsuno, Masakazu [1 ]
Ohtani, Noboru [1 ]
Fujimoto, Tatsuo [1 ]
Aigo, Takashi [1 ]
Yashiro, Hirokatsu [1 ]
机构：
[1] Nippon Steel Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Physical vapor transport (PVT) - Physical vapor transport growth - Polytype instabilities - Surface orientations;
D O I：
10.4028/www.scientific.net/msf.389-393.55
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：55 / 58
相关论文
共 50 条
  • [31] Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process
    Wellmann, PJ
    Hofmann, D
    Kadinski, L
    Selder, M
    Straubinger, TL
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 11 - 14
  • [32] Hybrid physical-chemical vapor transport growth of SiC bulk crystals
    Fanton, M. A.
    Li, Q.
    Polyakov, A. Y.
    Cavalero, R. L.
    Ray, R. G.
    Weiland, B. E.
    Skowronski, M.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 103 - +
  • [33] Growth of micropipe-free single crystal silicon carbide (SiC) ingots via physical vapor transport (PVT)
    Basceri, C.
    Khlebnikov, I.
    Khlebnikov, Y.
    Muzykov, P.
    Sharma, M.
    Stratiy, G.
    Silan, M.
    Balkas, C.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 39 - +
  • [34] Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals
    Ohtani, N
    Katsuno, M
    Tsuge, H
    Fujimoto, T
    Nakabayashi, M
    Yashiro, H
    Sawamura, M
    Aigo, T
    Hoshino, T
    JOURNAL OF CRYSTAL GROWTH, 2006, 286 (01) : 55 - 60
  • [35] Modeling of silicon carbide crystal growth by physical vapor transport method
    Ma, RH
    Chen, QS
    Zhang, H
    Prasad, V
    Balkas, CM
    Yushin, NK
    JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) : 352 - 359
  • [36] Physical vapor transport growth of large area AlN single crystal
    Qi, H. (tjuqht@163.com), 1600, Chinese Ceramic Society (41):
  • [37] Modeling of silicon carbide crystal growth by physical vapor transport method
    Ma, R.-H.
    Chen, Q.-S.
    Zhang, H.
    Prasad, V.
    Balkas, C.M.
    Yushin, N.K.
    Journal of Crystal Growth, 2000, 211 (01) : 352 - 359
  • [38] A cooling fin to enhance the efficiency of crystal growth by physical vapor transport
    Al-Atabi, Hayder A.
    Cheikh, Mohamad, I
    Hosni, M. H.
    Edgar, J. H.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2019, 251
  • [39] Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method
    Fu, Danyang
    Wang, Qikun
    Zhang, Gang
    Li, Zhe
    Huang, Jiali
    Wang, Jiang
    Wu, Liang
    CRYSTALS, 2021, 11 (11)
  • [40] Impurity effects in the growth of 4H-SiC crystals by physical vapor transport
    Balakrishna, V
    Augustine, G
    Hopkins, RH
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 245 - 252
12345