共 50 条
- [31] Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 11 - 14
- [32] Hybrid physical-chemical vapor transport growth of SiC bulk crystals SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 103 - +
- [33] Growth of micropipe-free single crystal silicon carbide (SiC) ingots via physical vapor transport (PVT) SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 39 - +
- [36] Physical vapor transport growth of large area AlN single crystal Qi, H. (tjuqht@163.com), 1600, Chinese Ceramic Society (41):
- [38] A cooling fin to enhance the efficiency of crystal growth by physical vapor transport MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2019, 251
- [40] Impurity effects in the growth of 4H-SiC crystals by physical vapor transport WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 245 - 252