Analysis of the inversion layer electron density distributions of Ta /Al2O3 MOSFETs

被引：0

作者：

Fujimoto, Taiki ^{[1
]}

Hiroki, Akira ^{[1
]}

Katano, Takuma ^{[1
]}

机构：

[1] Graduate School of Science and Technology, Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto,606-8585, Japan

来源：

IEEJ Transactions on Electronics, Information and Systems | 2016年 / 136卷 / 11期

关键词：

701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 714.2 Semiconductor Devices and Integrated Circuits - 804.2 Inorganic Compounds - 931.4 Quantum Theory; Quantum Mechanics - 933.1 Crystalline Solids - 933.3 Electronic Structure of Solids;

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摘要：

引用

页码：1500 / 1505