Improved aluminum-doped ZnO/metal back reflector for p-i-n amorphous silicon germanium thin film solar cells

被引：0

作者：

Wang, G.H. ^{[1
]}

Shi, C.Y. ^{[2
]}

Zhao, L. ^{[1
]}

Yan, B.J. ^{[1
]}

Wang, G. ^{[1
]}

Chen, J.W. ^{[1
]}

Li, Z.C. ^{[1
]}

Diao, H.W. ^{[1
]}

Wang, W.J. ^{[1
]}

机构：

[1] Key Laboratory of Solar Thermal Energy and Photovoltaic System, Chinese Academy of Sciences, Institute of Electrical Engineering, Beijing 100190, China

[2] Info. and Post and Telecommunications Industry Products Quality Surveillance and Inspection Center, China Telecommunication Technology Labs, China Academy of Research of MIIT, Beijing 100015, China

来源：

Thin Solid Films | 2013年 / 535卷 / 01期

关键词：

Silicon solar cells - Chromium - Diffusion barriers - Reflection - Thin film solar cells - Zinc oxide - Thin films - Aluminum oxide - II-VI semiconductors - Composite films - Alumina - Silver - Amorphous films - Amorphous silicon - Germanium;

D O I：

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中图分类号：

学科分类号：

摘要：

Different aluminum-doped ZnO (AZO)/metal composite films, including AZO/Al, AZO/Ag/Al and AZO/Ag/NiCr/Al, were utilized as the back reflectors for p-i-n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells. It was found that AZO/Al had a better performance than single Al electrode and the thickness of AZO film could strongly affect the short-circuit current density (Jsc) of the solar cells. However, AZO/Ag/Al, which was expected to improve the back reflectance further, gave out a bad effect, due to the inter diffusion of Ag and Al. While a nickel-chromium (NiCr) film was inserted between Ag and Al as a diffusion barrier, the highest Jsc was achieved. So AZO/Ag/NiCr/Al could be utilized as an improved AZO/metal back reflector for p-i-n a-SiGe:H solar cells. Crown Copyright © 2013 Published by Elsevier B.V. All rights reserved.

引用

页码：591 / 593