Simulation of MOS devices in radiation and post-irradiation

被引：0

作者：

Northwest Institute of Nuclear Technology, Xi'an 710613, China ^{[1
]}

机构：

来源：

Jisuan Wuli | 2007年 / 1卷 / 109-115期

关键词：

MOS devices;

D O I：

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学科分类号：

摘要：

引用

页码：109 / 115

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