Simulation of MOS devices in radiation and post-irradiation

被引：0
|
作者：
Northwest Institute of Nuclear Technology, Xi'an 710613, China [1 ]
机构：
来源：
Jisuan Wuli | 2007年 / 1卷 / 109-115期
关键词：
MOS devices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：109 / 115
相关论文
共 50 条
  • [1] Radiation effects and hardening of MOS technology: Devices and circuits
    Hughes, HL
    Benedetto, JM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 500 - 521
  • [2] Bias-temperature instabilities and radiation effects in MOS devices
    Zhou, XJ
    Fleetwood, DM
    Felix, JA
    Gusev, EP
    D'Emic, C
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2231 - 2238
  • [3] New insights on the post-BD conduction of MOS devices at the nanoscale
    Porti, M
    Meli, S
    Nafría, M
    Aymerich, X
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (02) : 109 - 111
  • [4] Statistics of competing post-breakdown failure modes in ultrathin MOS devices
    Suñé, J
    Wu, EY
    Lai, WL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) : 224 - 234
  • [5] Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices
    Manikanthababu, N.
    Arun, N.
    Dhanunjaya, M.
    Rao, S. V. S. Nageswara
    Pathak, A. P.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2016, 171 (1-2): : 77 - 86
  • [6] Radiation Effects in MOS Oxides
    Schwank, James R.
    Shaneyfelt, Marty R.
    Fleetwood, Daniel M.
    Felix, James A.
    Dodd, Paul E.
    Paillet, Philippe
    Ferlet-Cavrois, Veronique
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) : 1833 - 1853
  • [7] The effects of aging on MOS irradiation and annealing response
    Rodgers, MP
    Fleetwood, DM
    Schrimpf, RD
    Batyrev, IG
    Wang, S
    Pantelides, ST
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2642 - 2648
  • [8] FUTURE-PROSPECTS OF MOS DEVICES FOR LSI
    SUGANO, T
    IEICE TRANSACTIONS ON ELECTRONICS, 1993, E76C (07) : 1029 - 1033
  • [9] Analytical model for polysilicon quantization in MOS devices
    Dai, Y., 2005, Science Press (26):
  • [10] Effect of ionizing radiation on MOS capacitors
    Chauhan, RK
    Chakrabarti, P
    MICROELECTRONICS JOURNAL, 2002, 33 (03) : 197 - 203
12345