Monolithic integrated surface micromachined pressure sensors with analog on-chip linearization and temperature compensation
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作者:
Trieu, H.K.
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机构:
Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, GermanyFraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
Trieu, H.K.
[1
]
Knier, M.
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机构:
Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, GermanyFraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
Knier, M.
[1
]
Koester, O.
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机构:
Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, GermanyFraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
Koester, O.
[1
]
Kappert, H.
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机构:
Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, GermanyFraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
Kappert, H.
[1
]
论文数: 引用数:
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机构:
Schmidt, M.
[1
]
Mokwa, W.
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h-index: 0
机构:
Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, GermanyFraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
Mokwa, W.
[1
]
机构:
[1] Fraunhofer Inst of Microelectronic, Circuits and Systems, Duisburg, Germany
来源:
Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
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2000年
This paper introduces a noval family of monolithic integrated surface micromachined pressure sensors with both linearization and temperature compensation done on-chip. All sensor parameters are fully programmable and on-chip stored using integrated EEPROM. Surface micromachined capacitive pressure sensors are predestinated for monolithic integrated sensor systems due to their compatibility to a standard CMOS process. This enables a cost effective production. Compared with piezoresistive pressure sensors, the surface micro-machined pressure sensors are superior with respect to high overpressure stability, simple packaging, ease of monolithic integration of signal conditioning electronics, low power consumption and small chip size.