Effects of AlN buffer layer thickness and Al pre-treatment on properties of GaN/Si(111) epilayer

被引：0
|
作者：
Lian, Ruikai [1 ]
Li, Lin [1 ]
Fan, Yaming [2 ]
Wang, Yong [1 ]
Deng, Xuguang [2 ]
Zhang, Hui [2 ]
Feng, Lei [2 ]
Zhu, Jianjun [2 ]
Zhang, Baoshun [2 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
[2] Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2013年 / 40卷 / 01期
关键词：
AlN buffer - AlN buffer layers - Crystalline quality - GaN epitaxial layers - Pre-Treatment - Si (1 1 1) - Si(111) substrate - X-ray double crystal diffraction;
D O I：
10.3788/CJL201340.0106001
中图分类号：
学科分类号：
摘要：
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