Study of giant magnetoresistance in CoFe/Cu multilayer

被引：0
|
作者：
Zheng, Jinping [1 ,2 ]
Feng, Jie [1 ,2 ]
机构：
[1] National Key Laboratory of Nana/Micro Fabrication Technology, Institute of Micro and Nana Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China
[2] Key Laboratory for Thin Film and Microfabrication, Shanghai Jiaotong University, Shanghai 200030, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2007年 / 27卷 / 02期
关键词：
Annealing - Buffer layers - Cobalt alloys - Copper - Iron alloys - Magnetron sputtering - Multilayers - Silica - Silicon - Substrates - Tantalum;
D O I：
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中图分类号：
学科分类号：
摘要：
Ta/buffer layer/[Co95Fe5(at%)/Cu] ×12/Co95Fe5/Ta multilayers were deposited by dc magnetron sputtering on Si/SiO2 substrate. The giant magnetoresistance (GMR) of the multilayers are strongly influenced by both the buffer layer material and the thickness of each sublayer of CoFe and Cu; and the GMR is enhanced by annealing in a magnetic field. When the thickness of CoFe layer, Cu spacer and Ni65Fe15Co20(at.%) buffer layer are 1.55 nm, 2.4 nm and 8 ran, respectively, the GMR of as-deposited multilayers reach to 7.6%, but after annealed at 250°C for 2 hours in a magnetic field of 79.6 × 103 A/m, the GMR of the multilayer further increase to 11.9%, while its hysteresis field reduces from 18.7 × 102 A/m to 796 A/m.
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页码：123 / 126
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