Excess silicon concentration dependence of the structural and optical properties of silicon nanocrystals embedded in silicon oxide matrix

被引：0

作者：

Wahab Y.B. ^{[1
]}

Woon Y.W. ^{[2
]}

Deraman K.B. ^{[2
]}

机构：

[1] Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor

[2] Physics Department, Faculty of Science, University Teknologi Malaysia, 81310 Skudai, Johor

来源：

International Journal of Nanomanufacturing | 2010年 / 5卷 / 1-2期

关键词：

Optical properties; Silicon nanocrystals; Structural properties;

D O I：

10.1504/IJNM.2010.029925

中图分类号：

学科分类号：

摘要：

Silicon (Si) nanocrystals embedded in Si oxide matrix have been formed by rapid thermal annealing of sub-stoichiometric Si oxide films (SiOx with x < 2). The SiOx films were deposited by co-sputtering of Si oxide and Si target using magnetron RF sputtering technique. The Si-to-SiO 2 ratio was controlled by varying the number of Si chips being placed on the pure SiO2 target during sputtering. Rapid thermal anneal in nitrogen gas at 1100°C lead to the decomposition of SiOx into Si nanocrystals and SiO2. The structural (size of nanocrystals) and optical properties (absorption and luminescence) of Si nanocrystals embedded in oxide matrix, were found, strongly depend on the initial excess Si concentration in SiOx films. Copyright © 2010 Interscience Enterprises Ltd.

引用

页码：79 / 87

页数：8

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