Preparation technique of negative-electron-affinity GaN photocathode

被引：0

作者：

Guo X. ^{[1
]}

Wang X. ^{[1
]}

Chang B. ^{[1
]}

Zhang Y. ^{[1
]}

Qiao J. ^{[1
]}

机构：

[1] Department of Electronic Engineering, Nanjing University of Science and Technology, Nanjing

来源：

Guangxue Xuebao/Acta Optica Sinica | 2011年 / 31卷 / 02期

关键词：

(Cs; O); activation; GaN photocathode; Optoelectronics; Preparation technique; Quantum efficiency;

D O I：

10.3788/AOS201131.0219003

中图分类号：

学科分类号：

摘要：

By making use of the self-developed ultrahigh vacuum activation system and surface analysis system, the validity of GaN (0001) chemical cleaning formula is confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The heating cleaning technique to clean atom surface is proved to be correct by activated result. The activation technique combining Cs single activation with follow-up Cs/O alternative activation is established by integrating light current changing curve in the activation process. GaN photocathode whose surface achieves negative electron affinity (NEA) is prepared successfully. After the activation, the spectral response is measured by the illumination of optical fiber. The whole preparation technique is proved to be correct true according to quantum efficiency curve obtained by calculation. The technique process of preparing NEA GaN photocathode is established through a series of experments.

引用

共 17 条

[1]

Li H., Shen T., Dai L., Et al., GaN based negative electron affinity photocathode, Optoelectronic Technology, 27, 2, pp. 73-77, (2007)

[2]

Tong X., Luo M., Jiang D., Et al., Research development on GaN films grown by laser deposition, Laser Journal, 27, 1, pp. 5-7, (2006)

[3]

Qiao J., Niu J., Yang Z., Et al., Study of NEA GaN photocathode surface model, Optical Technique, 35, 1, pp. 145-151, (2009)

[4]

Qiao J., Tian S., Chang B., Et al., Activation mechanism of negative electron affinity GaN photocathode, Acta Physica Sinica, 58, 8, pp. 5847-5851, (2009)

[5]

Zhi L., Yun S., Machuca F., Et al., Optimization and characterization of III-V surface cleaning, J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21, 4, pp. 1953-1958, (2003)

[6]

Du X., Study of high performance GaAs photocathode, pp. 63-64, (2005)

[7]

Machuca F.J., A thin-film P-type GaN photocathode: Prospect for a high performance electron emitter, pp. 15-29, (2003)

[8]

Du X., Chang B., Wang G., Et al., (Cs, O) activation technique of NEA photocathode, Acta Photonica Sinica, 32, 7, pp. 826-829, (2003)

[9]

Duo X., Chang B., Qian Y., Et al., Activation technique for NEA GaN photocathode, Chinese J. Lasers, 37, 2, pp. 385-388, (2010)

[10]

Zou J., Chang B., Yang Z., The quantum efficiency calculation of exponential doping GaAs photocathode, Acta Physica Sinica, 56, 5, pp. 2992-2997, (2007)

← 1 2 →