Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects

被引：17
作者：
Bauer, Jan [1 ]
Lausch, Dominik [2 ]
Blumtritt, Horst [1 ]
Zakharov, Nikolai [1 ]
Breitenstein, Otwin [1 ]
机构：
[1] Max Planck Institute of Microstructure Physics, 06120 Halle
[2] Fraunhofer Center for Silicon Photovoltaics CSP, Halle
来源：
Bauer, J. (jbauer@mpi-halle.mpg.de) | 1600年 / John Wiley and Sons Ltd卷 / 21期
关键词：
alkaline texture; avalanche breakdown; breakdown voltage; multicrystalline solar cells; p-n junction;
D O I：
10.1002/pip.2220
中图分类号：
学科分类号：
摘要：
Multicrystalline solar cells break down strongly at reverse voltages well below the theoretical limit. Previous explanations were based on assuming a constant depth of the junction below the surface. In this work, preferred phosphorous diffusion at special line defects in grain boundaries is shown to lead to spikes in the p-n junctions even below flat surfaces. The curvature radii of the spherical p-n junction bending are measured by electron beam-induced current to be in the range of 300-500 nm, leading to the observed type III avalanche breakdown voltages. Copyright © 2012 John Wiley & Sons, Ltd.
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页码：1444 / 1453
页数：9
相关论文
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