Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field

被引：0

作者：

Li, Hong ^{[1
]}

Liu, Yuhang ^{[1
]}

Bai, Zhonghao ^{[1
]}

Xiong, Jie ^{[1
]}

Liu, Fengbin ^{[1
]}

Zhou, Gang ^{[2
]}

Qing, Tao ^{[2
]}

Zhang, Shaohua ^{[2
]}

Lu, Jing ^{[3
,4
,5
]}

机构：

[1] College of Mechanical and Material Engineering, North China University of Technology, Beijing,100144, China

[2] Beijing Key Laboratory of Long-life Technology of Precise Rotation and Transmission Mechanisms, Beijing Institute of Control Engineering, Beijing,100094, China

[3] State Key Laboratory of Mesoscopic Physics, Department of Physics, Peking University, Beijing,100871, China

[4] Collaborative Innovation Center of Quantum Matter, Beijing,100871, China

[5] Peking University Yangtze Delta Institute of Optoelectronics, Nantong,226000, China

来源：

Physics Letters, Section A: General, Atomic and Solid State Physics | 2022年 / 433卷

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Electric contactors - Heterojunctions - Indium arsenide - III-V semiconductors - Monolayers - Semiconducting gallium - Indium phosphide - Schottky barrier diodes - Van der Waals forces - Electric fields - Gallium arsenide - Graphene - Semiconducting indium phosphide

引用