Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field

被引：0
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作者：
Li, Hong [1 ]
Liu, Yuhang [1 ]
Bai, Zhonghao [1 ]
Xiong, Jie [1 ]
Liu, Fengbin [1 ]
Zhou, Gang [2 ]
Qing, Tao [2 ]
Zhang, Shaohua [2 ]
Lu, Jing [3 ,4 ,5 ]
机构：
[1] College of Mechanical and Material Engineering, North China University of Technology, Beijing,100144, China
[2] Beijing Key Laboratory of Long-life Technology of Precise Rotation and Transmission Mechanisms, Beijing Institute of Control Engineering, Beijing,100094, China
[3] State Key Laboratory of Mesoscopic Physics, Department of Physics, Peking University, Beijing,100871, China
[4] Collaborative Innovation Center of Quantum Matter, Beijing,100871, China
[5] Peking University Yangtze Delta Institute of Optoelectronics, Nantong,226000, China
来源：
Physics Letters, Section A: General, Atomic and Solid State Physics | 2022年 / 433卷
基金：
中国国家自然科学基金;
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electric contactors - Heterojunctions - Indium arsenide - III-V semiconductors - Monolayers - Semiconducting gallium - Indium phosphide - Schottky barrier diodes - Van der Waals forces - Electric fields - Gallium arsenide - Graphene - Semiconducting indium phosphide
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