Chemical vapor deposition of SiC and SiC + Si on carbon substrates and their chemical surface modification

被引：0

作者：

Marx, G. ^{[1
]}

Neuhäuser, J. ^{[1
]}

Nestler, K. ^{[1
]}

Treffer, G. ^{[1
]}

Plänitz, H. ^{[1
]}

Wagner, W. ^{[1
]}

机构：

[1] Technische Universität Chemnitz, Institut für Chemie, D-09107 Chemnitz, Germany

来源：

| 2001年 / Carl Hanser Verlag卷 / 92期

关键词：

Carbon fibers - Chemical vapor deposition - Silicon nitride - Surface treatment - Titanium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this work, systematical investigations about deposition of silicon carbide and silicon carbide with co-deposited silicon on carbon substrates are represented. The deposition is performed by thermal CVD in a CH3SiCl3-H2 Ar atmosphere. From this, new coherences could be derived between layer characteristics (like chemical composition and structure) and deposition parameters. In a second step, co-deposited silicon, by using thermal nitridation, can be convened into silicon nitride. By this reaction, also the silicon carbide layer reacts to silicon nitride. In the roundabout way of titanium incorporation into the SiC(Si) system titanium silicides were formed at deposition temperature - a mixed layer can be offered, converting selectively the co-deposited silicon into silicon nitride.

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