Analysis of the low-frequency noise reduction in Si(100) metal-oxide-semiconductor field-effect transistors

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New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan [1 ]
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Jpn. J. Appl. Phys. | / 4 PART 2卷
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
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摘要：
Dielectric devices - Metallic compounds - Oxide semiconductors - VLSI circuits - Metals - MOS devices - Electric breakdown - Digital radio
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