Exploiting Polarization Charges for High-Performance (000-1) Facet GaN/InGaN/GaN Core/Shell/Shell Triangular Nanowire Solar Cell

被引：1
作者：
Routray S. [1 ]
Shougaijam B. [1 ]
Lenka T.R. [1 ]
机构：
[1] Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology at Silchar, Silchar
来源：
IEEE J. Quantum Electron. | / 5卷
关键词：
GaN; InGaN; nanowire; polarization; solar cell; strain;
D O I：
10.1109/JQE.2017.2734078
中图分类号：
学科分类号：
摘要：
In III-nitride nanowire (NW)-based solar cells, efficient utilization of polarization charges is essential in order to achieve high performance. In this paper, the polarization behavior of a GaN/InxGa1-xN/GaN core/shell/shell triangular NW solar cell with {000-1} or {0001} as one of the facets is intensively studied through numerical simulations. An analysis of defect density, strain profile, and polarization charges at different facets of NWs with different 'In' compositions is considered carefully. It is observed that an NW solar cell with a N-polar {000-1} facet is good enough to enhance carrier collection efficiency as compared with Ga-polar {0001} facet. This numerical study provides an innovative aspect of implementation of fundamental device physics with respect to recent growth techniques in order to realize the application of III-nitride NWs toward photovoltaic applications. The effect of an InxGa1-xN layer with different 'In' compositions in all crystallographic orientations of NW solar cells is also discussed. It is interesting to observe that a maximum conversion efficiency of 3.85% with the 93.38% fill factor is achieved from an n-GaN/i-InxGa1-xN/p-GaN nanowire solar cell considering 10% of 'In' content under one Sun AM1.5 illumination. © 1965-2012 IEEE.
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