A Scanning Tunneling Spectroscopy Study on TCNQ/n-Si and/p-Si

被引：0

作者：

Lee, Haeseong ^{[1
]}

Lee, Namhyung ^{[1
]}

Lee, Haiwon ^{[1
]}

Bae, Sung Soo ^{[2
]}

Kim, Sehun ^{[2
]}

机构：

[1] Department of Chemistry, Hanyang University, Seoul,133-791, Korea, Republic of

[2] Department of Chemistry, KAIST, Taejeon,305-701, Korea, Republic of

来源：

Molecular Crystals and Liquid Crystals | 2002年 / 377卷 / 01期

关键词：

Film thickness - Silicon compounds;

D O I：

10.1080/713738551

中图分类号：

学科分类号：

摘要：

A thin film (thickness: 1.5 nm) of tetracyanoquinodimethane (TCNQ), a well-known electron acceptor, was fabricated on p-Si and n-Si using a spin casting method. The junction properties of these systems were investigated using scanning tunneling spectroscopy (STS). I/V curves of the two systems showed rectifying properties with different polarity. It can provide a new technology to fabricate molecular-level rectifier if nanolithography is accomplished on these systems. © 2002, Copyright Taylor & Francis Group, LLC.

引用

页码：25 / 28