Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements

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作者：
Hsu, C.T. [1 ]
Lau, M.M. [1 ]
Yeow, Y.T. [1 ]
Yao, Z.Q. [1 ]
机构：
[1] Univ of Queensland, Brisbane
来源：
Annual Proceedings - Reliability Physics (Symposium) | 2000年
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页码：98 / 102
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