Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements

被引：0

作者：

Hsu, C.T. ^{[1
]}

Lau, M.M. ^{[1
]}

Yeow, Y.T. ^{[1
]}

Yao, Z.Q. ^{[1
]}

机构：

[1] Univ of Queensland, Brisbane

来源：

Annual Proceedings - Reliability Physics (Symposium) | 2000年

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摘要：

引用

页码：98 / 102

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