New standby degradation mode in n-channel MOSFETs with thin gate oxide

被引：0

作者：

Tanaka, Hiroyuki ^{[1
]}

Shinohara, Hirofumi ^{[1
]}

Uchida, Hidetsugu ^{[1
]}

Ida, Jiro ^{[1
]}

机构：

[1] Device Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashi-Asakawa, Hachioji, Tokyo 193-8550, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期

关键词：

Electron tunneling - Gates (transistor) - Hot carriers - LSI circuits - Reliability - Substrates - Threshold voltage - Transconductance - Voltage control;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

As a new standby degradation mode in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with thin gate oxide, the drain voltage was found to cause degradation of transconductance in the linear region (Gm) while the gate, source, and substrate were connected to ground as a standby off-state condition. Although the gate voltage is 0 V, Gm degradation has a power correlation to the stress time. The degradation increases with decreasing gate length and gate-oxide thickness. The estimated drain voltage and gate length which caused 10% degradation of Gm in 10 years were 2.0 V and 0.11 μm, respectively for the samples with 3.2 nm gate-oxide thickness. The degradation was found to be attributed mainly to band-to-band tunneling in the gate-drain overlap region. This degradation mode may possibly limit device scaling when using thin gate oxide from the point of view of reliability.

引用

页码：1992 / 1995